STS9P2UH7 Specs and Replacement

Type Designator: STS9P2UH7

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.5 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm

Package: SO-8

STS9P2UH7 substitution

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STS9P2UH7 datasheet

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STS9P2UH7

STS9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a SO-8 package Datasheet - production data Features 5 8 Order code V R max I DS DS(on) D STS9P2UH7 20 V 0.0225 @ 4.5 V 9 A 4 1 Very low on-resistance Very low capacitance and gate charge SO-8 High avalanche ruggedness Ultra logic level Figure 1 Internal schematic diagram... See More ⇒

Detailed specifications: STS5DP3LLH6, STS5P3LLH6, STS5PF20V, STS6P3LLH6, STS6PF30L, STS7P4LLF6, STS8C6H3LL, STS9NH3LL, 5N65, STSJ100NH3LL, STSJ100NHS3LL, STSJ25NF3LL, STSJ50NH3LL, STSJ60NH3LL, STT2PF60L, STT3P2UH7, STT3PF30L

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