STT4P3LLH6 Datasheet and Replacement
Type Designator: STT4P3LLH6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 79 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: SOT-23
STT4P3LLH6 substitution
STT4P3LLH6 Datasheet (PDF)
stt4p3llh6.pdf
STT4P3LLH6P-Channel 30 V, 0.048 typ., 4 A STripFET H6 DeepGATEPower MOSFET in an SOT23-6L packageDatasheet - preliminary dataFeatures4Order code VDS RDS(on) max ID5STT4P3LLH6 30 V 0.056 at 10 V 4 A 632 Very low on-resistance RDS(on)1 Very low gate charge High avalanche ruggednessSOT23-6L Low gate drive power lossFigure 1. Internal sch
stt4pf20v.pdf
STT4PF20VP-CHANNEL 20V - 0.090 - 3A SOT23-6L2.7V-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) ID
Datasheet: STSJ100NH3LL , STSJ100NHS3LL , STSJ25NF3LL , STSJ50NH3LL , STSJ60NH3LL , STT2PF60L , STT3P2UH7 , STT3PF30L , IRF1407 , STT4PF20V , STT5N2VH5 , STT5PF20V , STT6N3LLH6 , STT7P2UH7 , STU10N60M2 , STU10NM65N , STU10P6F6 .
History: APQ84SN06A | IXFT30N60X
Keywords - STT4P3LLH6 MOSFET datasheet
STT4P3LLH6 cross reference
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STT4P3LLH6 substitution
STT4P3LLH6 replacement
History: APQ84SN06A | IXFT30N60X
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