STT4PF20V Specs and Replacement

Type Designator: STT4PF20V

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT-23

STT4PF20V substitution

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STT4PF20V datasheet

 ..1. Size:188K  st
 stt4pf20v.pdf pdf_icon

STT4PF20V

STT4PF20V P-CHANNEL 20V - 0.090 - 3A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID ... See More ⇒

 9.1. Size:435K  st
 stt4p3llh6.pdf pdf_icon

STT4PF20V

STT4P3LLH6 P-Channel 30 V, 0.048 typ., 4 A STripFET H6 DeepGATE Power MOSFET in an SOT23-6L package Datasheet - preliminary data Features 4 Order code VDS RDS(on) max ID 5 STT4P3LLH6 30 V 0.056 at 10 V 4 A 6 3 2 Very low on-resistance RDS(on) 1 Very low gate charge High avalanche ruggedness SOT23-6L Low gate drive power loss Figure 1. Internal sch... See More ⇒

Detailed specifications: STSJ100NHS3LL, STSJ25NF3LL, STSJ50NH3LL, STSJ60NH3LL, STT2PF60L, STT3P2UH7, STT3PF30L, STT4P3LLH6, TK10A60D, STT5N2VH5, STT5PF20V, STT6N3LLH6, STT7P2UH7, STU10N60M2, STU10NM65N, STU10P6F6, STU11N65M2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.