STT5N2VH5 Datasheet and Replacement
Type Designator: STT5N2VH5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.4 nS
Cossⓘ - Output Capacitance: 92 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-23
STT5N2VH5 substitution
STT5N2VH5 Datasheet (PDF)
stt5n2vh5.pdf
STT5N2VH5N-channel 20 V, 0.025 typ., 5 A STripFET V Power MOSFET in a SOT23-6L packageDatasheet production dataFeatures Order code VDS RDS(on) max ID PTOTSTT5N2VH5 20 V 0.04 (VGS=2.5 V) 5 A 1.6 W45 Very low profile package632 Conduction losses reduced1 Switching losses reducedSOT23-6L 2.5 V gate drive Very low threshold deviceAp
stt5nf20v.pdf
STT5NF20VN-channel 20 V, 0.030 , 5 A SOT23-6L2.5 V drive STripFET II Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) ID
Datasheet: STSJ25NF3LL , STSJ50NH3LL , STSJ60NH3LL , STT2PF60L , STT3P2UH7 , STT3PF30L , STT4P3LLH6 , STT4PF20V , P60NF06 , STT5PF20V , STT6N3LLH6 , STT7P2UH7 , STU10N60M2 , STU10NM65N , STU10P6F6 , STU11N65M2 , STU11N65M5 .
Keywords - STT5N2VH5 MOSFET datasheet
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