STT5N2VH5 Specs and Replacement

Type Designator: STT5N2VH5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.4 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT-23

STT5N2VH5 substitution

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STT5N2VH5 datasheet

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 stt5n2vh5.pdf pdf_icon

STT5N2VH5

STT5N2VH5 N-channel 20 V, 0.025 typ., 5 A STripFET V Power MOSFET in a SOT23-6L package Datasheet production data Features Order code VDS RDS(on) max ID PTOT STT5N2VH5 20 V 0.04 (VGS=2.5 V) 5 A 1.6 W 4 5 Very low profile package 6 3 2 Conduction losses reduced 1 Switching losses reduced SOT23-6L 2.5 V gate drive Very low threshold device Ap... See More ⇒

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 stt5nf20v.pdf pdf_icon

STT5N2VH5

STT5NF20V N-channel 20 V, 0.030 , 5 A SOT23-6L 2.5 V drive STripFET II Power MOSFET Preliminary data Features Type VDSS RDS(on) ID ... See More ⇒

Detailed specifications: STSJ25NF3LL, STSJ50NH3LL, STSJ60NH3LL, STT2PF60L, STT3P2UH7, STT3PF30L, STT4P3LLH6, STT4PF20V, AO4407, STT5PF20V, STT6N3LLH6, STT7P2UH7, STU10N60M2, STU10NM65N, STU10P6F6, STU11N65M2, STU11N65M5

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