All MOSFET. STT6N3LLH6 Datasheet

 

STT6N3LLH6 Datasheet and Replacement


   Type Designator: STT6N3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT-23
 

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STT6N3LLH6 Datasheet (PDF)

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STT6N3LLH6

STT6N3LLH6N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max ID PTOT 0.025 (VGS= 10 V)4STT6N3LLH6 30 V 6 A 1.6 W50.036 63(VGS= 4.5 V)21 RDS(on) * Qg industry benchmarkSOT23-6L Extremely low on-resistance RDS(on) High avalanche ruggedn

Datasheet: STSJ60NH3LL , STT2PF60L , STT3P2UH7 , STT3PF30L , STT4P3LLH6 , STT4PF20V , STT5N2VH5 , STT5PF20V , 10N65 , STT7P2UH7 , STU10N60M2 , STU10NM65N , STU10P6F6 , STU11N65M2 , STU11N65M5 , STU12N60M2 , STU13N60M2 .

Keywords - STT6N3LLH6 MOSFET datasheet

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