STT6N3LLH6 Specs and Replacement

Type Designator: STT6N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.2 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT-23

STT6N3LLH6 substitution

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STT6N3LLH6 datasheet

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STT6N3LLH6

STT6N3LLH6 N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDSS RDS(on) max ID PTOT 0.025 (VGS= 10 V) 4 STT6N3LLH6 30 V 6 A 1.6 W 5 0.036 6 3 (VGS= 4.5 V) 2 1 RDS(on) * Qg industry benchmark SOT23-6L Extremely low on-resistance RDS(on) High avalanche ruggedn... See More ⇒

Detailed specifications: STSJ60NH3LL, STT2PF60L, STT3P2UH7, STT3PF30L, STT4P3LLH6, STT4PF20V, STT5N2VH5, STT5PF20V, 4N60, STT7P2UH7, STU10N60M2, STU10NM65N, STU10P6F6, STU11N65M2, STU11N65M5, STU12N60M2, STU13N60M2

Keywords - STT6N3LLH6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.