STT7P2UH7 Specs and Replacement

Type Designator: STT7P2UH7

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.5 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm

Package: SOT-23

STT7P2UH7 substitution

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STT7P2UH7 datasheet

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STT7P2UH7

STT7P2UH7 P-channel 20 V, 0.0195 typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications SOT23-6L Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate Figure... See More ⇒

Detailed specifications: STT2PF60L, STT3P2UH7, STT3PF30L, STT4P3LLH6, STT4PF20V, STT5N2VH5, STT5PF20V, STT6N3LLH6, IRFP250, STU10N60M2, STU10NM65N, STU10P6F6, STU11N65M2, STU11N65M5, STU12N60M2, STU13N60M2, STU13N65M2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.