STU13NM60N MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

STU13NM60N Specs and Replacement

Type Designator: STU13NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: IPAK

STU13NM60N substitution

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STU13NM60N datasheet

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STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features TAB VDSS RDS(on) Order codes ID (@Tjmax) max 3 3 2 2 1 STF13NM60N 1 I PAK TO-220FP STI13NM60N STP13NM60N 650 V ... See More ⇒

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STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STU13NB60 600 V ... See More ⇒

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stp13n60m2 stu13n60m2 stw13n60m2.pdf pdf_icon

STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 3 2 1 STP13N60M2 3 2 1 IPAK STU13N60M2 650 V 0.38 11 A TO-220 STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g... See More ⇒