All MOSFET. STU1HN60K3 Datasheet

 

STU1HN60K3 Datasheet and Replacement


   Type Designator: STU1HN60K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: IPAK
 
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STU1HN60K3 Datasheet (PDF)

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STU1HN60K3

STD1HN60K3, STU1HN60K3N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS max ID PTOTSTD1HN60K3TABTAB600 V 8 1.2 A 27 WSTU1HN60K333121 100% avalanche testedDPAKIPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac

Datasheet: STU11N65M2 , STU11N65M5 , STU12N60M2 , STU13N60M2 , STU13N65M2 , STU13NM60N , STU16N60M2 , STU16N65M2 , IRF2807 , STU2LN60K3 , STU2N105K5 , STU2N80K5 , STU2N95K5 , STU3N80K5 , STU4N80K5 , STU5N60M2 , STU60N3LH5-S .

History: BLS65R560-D

Keywords - STU1HN60K3 MOSFET datasheet

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