STU1HN60K3 Specs and Replacement

Type Designator: STU1HN60K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: IPAK

STU1HN60K3 substitution

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STU1HN60K3 datasheet

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 std1hn60k3 stu1hn60k3.pdf pdf_icon

STU1HN60K3

STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packages Datasheet - production data Features RDS(on) Order codes VDS max ID PTOT STD1HN60K3 TAB TAB 600 V 8 1.2 A 27 W STU1HN60K3 3 3 1 2 1 100% avalanche tested DPAK IPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac... See More ⇒

Detailed specifications: STU11N65M2, STU11N65M5, STU12N60M2, STU13N60M2, STU13N65M2, STU13NM60N, STU16N60M2, STU16N65M2, STF13NM60N, STU2LN60K3, STU2N105K5, STU2N80K5, STU2N95K5, STU3N80K5, STU4N80K5, STU5N60M2, STU60N3LH5-S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.