All MOSFET. STU1HN60K3 Datasheet

 

STU1HN60K3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STU1HN60K3
   Marking Code: 1HN60K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: IPAK

 STU1HN60K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU1HN60K3 Datasheet (PDF)

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 std1hn60k3 stu1hn60k3.pdf

STU1HN60K3 STU1HN60K3

STD1HN60K3, STU1HN60K3N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS max ID PTOTSTD1HN60K3TABTAB600 V 8 1.2 A 27 WSTU1HN60K333121 100% avalanche testedDPAKIPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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