All MOSFET. STU9HN65M2 Datasheet

 

STU9HN65M2 Datasheet and Replacement


   Type Designator: STU9HN65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
   Package: IPAK
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STU9HN65M2 Datasheet (PDF)

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STU9HN65M2

STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switching applic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CEP07N7 | CEM6086L | AP4N2R6MT | AP60SL280AIN | STW28NM60ND | AP4575GM-HF | AP4820GYT-HF

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