All MOSFET. STU9HN65M2 Datasheet

 

STU9HN65M2 Datasheet and Replacement


   Type Designator: STU9HN65M2
   Marking Code: 9HN65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11.5 nC
   tr ⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
   Package: IPAK
 

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STU9HN65M2 Datasheet (PDF)

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STU9HN65M2

STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switching applic

Datasheet: STU7N105K5 , STU7N60M2 , STU7N65M2 , STU7N80K5 , STU7NF25 , STU80N4F6 , STU8N80K5 , STU95N4F3 , 2N7002 , STU9N60M2 , STU9N65M2 , IRFR420APBF , IRFR420B , IRFR420PBF , IRFR430A , IRFR430APBF , IRFR4510PBF .

History: TJ100F04M3L

Keywords - STU9HN65M2 MOSFET datasheet

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