STU9HN65M2 Specs and Replacement

Type Designator: STU9HN65M2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.6 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm

Package: IPAK

STU9HN65M2 substitution

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STU9HN65M2 datasheet

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STU9HN65M2

STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 3 2 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAK Applications Switching applic... See More ⇒

Detailed specifications: STU7N105K5, STU7N60M2, STU7N65M2, STU7N80K5, STU7NF25, STU80N4F6, STU8N80K5, STU95N4F3, MMIS60R580P, STU9N60M2, STU9N65M2, IRFR420APBF, IRFR420B, IRFR420PBF, IRFR430A, IRFR430APBF, IRFR4510PBF

Keywords - STU9HN65M2 MOSFET specs

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