All MOSFET. STU9HN65M2 Datasheet

 

STU9HN65M2 Datasheet and Replacement


   Type Designator: STU9HN65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
   Package: IPAK
 

 STU9HN65M2 substitution

   - MOSFET ⓘ Cross-Reference Search

 

STU9HN65M2 Datasheet (PDF)

 ..1. Size:404K  st
 stu9hn65m2.pdf pdf_icon

STU9HN65M2

STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switching applic

Datasheet: STU7N105K5 , STU7N60M2 , STU7N65M2 , STU7N80K5 , STU7NF25 , STU80N4F6 , STU8N80K5 , STU95N4F3 , 2N7002 , STU9N60M2 , STU9N65M2 , IRFR420APBF , IRFR420B , IRFR420PBF , IRFR430A , IRFR430APBF , IRFR4510PBF .

History: FDS4072N7 | IRFR420PBF | P1350AT

Keywords - STU9HN65M2 MOSFET datasheet

 STU9HN65M2 cross reference
 STU9HN65M2 equivalent finder
 STU9HN65M2 lookup
 STU9HN65M2 substitution
 STU9HN65M2 replacement

 

 
Back to Top

 


 
.