IRFS3507PBF Datasheet and Replacement
Type Designator: IRFS3507PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 97 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO-263
IRFS3507PBF substitution
IRFS3507PBF Datasheet (PDF)
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf

PD - 95935BIRFB3507PbFIRFS3507PbFIRFSL3507PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS75Vl High Speed Power SwitchingRDS(on) typ.7.0ml Hard Switched and High Frequency Circuitsl Lead-FreeG max. 8.8mID97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessSSS
irfs3507pbf.pdf

PD - 95935BIRFB3507PbFIRFS3507PbFIRFSL3507PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS75Vl High Speed Power SwitchingRDS(on) typ.7.0ml Hard Switched and High Frequency Circuitsl Lead-FreeG max. 8.8mID97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessSSS
irfs350a.pdf

IRFS350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character
Datasheet: IRFS31N20DPBF , IRFS3206PBF , IRFS3207PBF , IRFS3207ZPBF , IRFS3306PBF , IRFS3307PBF , IRFS3307ZPBF , IRFS33N15DPBF , IRF1010E , IRFS3607PBF , IRFS3806PBF , IRFS38N20DPBF , IRFS4010-7PPBF , IRFS4010PBF , IRFS4020PBF , IRFS4115-7PPBF , IRFS4115PBF .
Keywords - IRFS3507PBF MOSFET datasheet
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History: PMN40LN | CEM0310



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