STB100NF04T4 Specs and Replacement

Type Designator: STB100NF04T4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 220 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: D2PAK

STB100NF04T4 substitution

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STB100NF04T4 datasheet

 ..1. Size:395K  st
 stb100nf04t4.pdf pdf_icon

STB100NF04T4

STP100NF04 STB100NF04 N-channel 40V - 0.0043 - 120A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID Pw STP100NF04 40V ... See More ⇒

 4.1. Size:338K  st
 stb100nf04l.pdf pdf_icon

STB100NF04T4

STB100NF04L N-CHANNEL 40V - 0.0036 - 100A D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB100NF04L 40 V ... See More ⇒

 4.2. Size:398K  st
 stb100nf04 stp100nf04.pdf pdf_icon

STB100NF04T4

STP100NF04 STB100NF04 N-channel 40V - 0.0043 - 120A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID Pw STP100NF04 40V ... See More ⇒

 4.3. Size:1472K  cn vbsemi
 stb100nf04.pdf pdf_icon

STB100NF04T4

STB100NF04 www.VBsemi.tw N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.005 at VGS = 10 V 100 40 53 nC 100 % Rg and UIS tested 0.006 at VGS = 4.5 V 98 Material categorization for definitions of compliance please see D TO-263 G S S S D D G ... See More ⇒

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Detailed specifications: IRFS4229PBF, IRFS4310PBF, IRFS4310ZPBF, IRFS4321-7PPBF, IRFS4321PBF, STB100N10F7, STB100NF03L-03-1, STB100NF03L-03T4, SI2302, STB100NH02LT4, STB10N60M2, STB10N65K3, STB10N95K5, STB10NK60Z-1, STB10NK60ZT4, STB11N65M5, STB11NK40ZT4

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