STB10N65K3 MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

STB10N65K3 Specs and Replacement

Type Designator: STB10N65K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 125 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: D2PAK

STB10N65K3 substitution

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STB10N65K3 datasheet

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