STB15NK50ZT4 Datasheet and Replacement
Type Designator: STB15NK50ZT4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 264 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: D2PAK
STB15NK50ZT4 substitution
STB15NK50ZT4 Datasheet (PDF)
stb15nk50zt4 stp15nk50zfp.pdf
STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V
stp15nk50zfp stb15nk50z stb15nk50z-1 stw15nk50z.pdf
STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V
stp15nk50z stp15nk50zfp stb15nk50z stb15nk50z-1 stw15nk50z.pdf
STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V
stb15nm65n sti15nm65n stf15nm65n stp15nm65n stw15nm65n.pdf
STF15NM65N-STI15NM65N-STW15NM65NSTB15NM65N-STP15NM65NN-channel 650V - 0.25 - 15.5A - TO-220/FP - D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) Max ID(@Tjmax)323121STB15NM65N 710 V
Datasheet: STB141NF55-1 , STB14NK50Z-1 , STB14NK50ZT4 , STB14NK60Z-1 , STB14NK60ZT4 , STB14NM65N , STB150NF55T4 , STB15N80K5 , IRFZ44 , STB15NM60N , STB160NF3LLT4 , STB16NF06LT4 , STB16NK65Z-S , STB16NM50N , STB16NS25T4 , STB16PF06LT4 , STB18N60M2 .
Keywords - STB15NK50ZT4 MOSFET datasheet
STB15NK50ZT4 cross reference
STB15NK50ZT4 equivalent finder
STB15NK50ZT4 lookup
STB15NK50ZT4 substitution
STB15NK50ZT4 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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