All MOSFET. STB160NF3LLT4 Datasheet

 

STB160NF3LLT4 Datasheet and Replacement


   Type Designator: STB160NF3LLT4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 350 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: D2PAK
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STB160NF3LLT4 Datasheet (PDF)

 ..1. Size:419K  st
 stb160nf3llt4.pdf pdf_icon

STB160NF3LLT4

STB160NF3LLN-channel 30V - 0.0028 - 160A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB160NF3LL 30V

 3.1. Size:421K  st
 stb160nf3ll.pdf pdf_icon

STB160NF3LLT4

STB160NF3LLN-channel 30V - 0.0028 - 160A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB160NF3LL 30V

 6.1. Size:289K  st
 stb160nf02l.pdf pdf_icon

STB160NF3LLT4

STB160NF02LN-CHANNEL 20V - 0.0018 - 160A D2PAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB160NF02L 20 V

 6.2. Size:431K  st
 stb160nf03l.pdf pdf_icon

STB160NF3LLT4

STB160NF03LN-CHANNEL 30V - 0.0021 - 160A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB160NF03L 30 V

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History: PSMN8R5-60YS | AON6794 | BUZ84 | CED05N8 | PSMN9R5-30YLC | IRLR024 | BL10N70-A

Keywords - STB160NF3LLT4 MOSFET datasheet

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