All MOSFET. STB16NS25T4 Datasheet

 

STB16NS25T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB16NS25T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   Rise Time (tr): 25 nS
   Drain-Source Capacitance (Cd): 190 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
   Package: D2PAK

 STB16NS25T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB16NS25T4 Datasheet (PDF)

 ..1. Size:348K  st
stb16ns25t4.pdf

STB16NS25T4
STB16NS25T4

STB16NS25N-CHANNEL 250V - 0.23 - 16AD2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTB16NS25 250 V

 5.1. Size:469K  st
stb16ns25.pdf

STB16NS25T4
STB16NS25T4

STB16NS25N-CHANNEL 250V - 0.23 - 16AD2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTB16NS25 250 V

 8.1. Size:294K  st
stb16nk65z-s stp16nk65z.pdf

STB16NS25T4
STB16NS25T4

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

 8.2. Size:577K  st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf

STB16NS25T4
STB16NS25T4

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

 8.3. Size:399K  st
stb16nf06lt4.pdf

STB16NS25T4
STB16NS25T4

STB16NF06LN-channel 60V - 0.07 - 16A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB16NF06L 60V

 8.4. Size:54K  st
stb16nb25.pdf

STB16NS25T4
STB16NS25T4

STB16NB25N - CHANNEL 250V - 0.220 - 16 A - TO-263PowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB16NB25 250 V

 8.5. Size:574K  st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf

STB16NS25T4
STB16NS25T4

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

 8.6. Size:338K  st
stp16nk65z stb16nk65z-s.pdf

STB16NS25T4
STB16NS25T4

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

 8.7. Size:408K  st
stb16nf06l.pdf

STB16NS25T4
STB16NS25T4

STB16NF06LN-channel 60V - 0.07 - 16A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB16NF06L 60V

 8.8. Size:1032K  st
stb16n65m5 std16n65m5.pdf

STB16NS25T4
STB16NS25T4

STB16N65M5STD16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin DPAK, DPAKFeaturesVDSS @ RDS(on) Type IDTJmax max.STB16N65M5710 V

 8.9. Size:115K  st
stb16ne06.pdf

STB16NS25T4
STB16NS25T4

STB60NE06-16N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE V R IDSS DS(on) DSTB60NE06-1 60 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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