STB20NK50ZT4 Specs and Replacement
Type Designator: STB20NK50ZT4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 328 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: D2PAK
STB20NK50ZT4 substitution
- MOSFET ⓘ Cross-Reference Search
STB20NK50ZT4 datasheet
stb20nk50zt4.pdf
STB20NK50Z N-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFET Zener-protected in D PAK package Datasheet obsolete product Features RDS(on) Type VDSS ID PW max STB20NK50Z 500 V ... See More ⇒
stb20nm60-1 stb20nm60t4.pdf
STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V ... See More ⇒
stb20nm50-1 stb20nm50 stb20nm50t4 stp20nm50fp.pdf
STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJmax) 3 3 2 STB20NM50 550V ... See More ⇒
Detailed specifications: STB200NF03-1, STB200NF03T4, STB200NF04-1, STB200NF04L, STB200NF04L-1, STB200NF04T4, STB20N65M5, STB20N95K5, IRF9540N, STB20NM50, STB20NM50-1, STB20NM50FDT4, STB20NM50T4, STB20NM60-1, STB20NM60T4, STB21N90K5, STB21NM50N
Keywords - STB20NK50ZT4 MOSFET specs
STB20NK50ZT4 cross reference
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History: STB20N65M5
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