STB20NM60T4 MOSFET Datasheet: N-Ch, 600V, 20A. Full specification with pinout and replacement list

STB20NM60T4 Specs and Replacement

Type Designator: STB20NM60T4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: D2PAK

STB20NM60T4 substitution

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STB20NM60T4 datasheet

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STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V ... See More ⇒

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stb20nm60d.pdf pdf_icon

STB20NM60D N-channel 600V - 0.26 - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS(on) ID Pw STB20NM60D 600V ... See More ⇒

5.2. Size:309K st
stb20nm60a-1 stp20nm60a stf20nm60a.pdf pdf_icon

STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 650V@Tjmax - 0.25 - 20A I PAK/TO-220/TO-220FP MDmesh MOSFET TYPE VDSS @Tjmax RDS(on) ID STB20NM60A-1 650 V ... See More ⇒

5.3. Size:444K st
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