STB22NS25ZT4 Specs and Replacement

Type Designator: STB22NS25ZT4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: D2PAK

STB22NS25ZT4 substitution

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STB22NS25ZT4 datasheet

 ..1. Size:309K  st
stb22ns25zt4.pdf pdf_icon

STB22NS25ZT4

STB22NS25Z - STP22NS25Z N-channel 250V - 0.13 - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY Power MOSFET General features Type VDSS RDS(on) ID STB22NS25Z 250V ... See More ⇒

 4.1. Size:316K  st
stb22ns25z stp22ns25z.pdf pdf_icon

STB22NS25ZT4

STB22NS25Z - STP22NS25Z N-channel 250V - 0.13 - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY Power MOSFET General features Type VDSS RDS(on) ID STB22NS25Z 250V ... See More ⇒

 8.2. Size:593K  st
stb22nm60n stf22nm60n stp22nm60n.pdf pdf_icon

STB22NS25ZT4

STB22NM60N, STF22NM60N, STP22NM60N Datasheet N-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in D PAK, TO-220FP and TO-220 packages Features TAB VDS @ 3 1 RDS(on)max. ID Order code 2 D PAK Tjmax. 3 2 1 TO-220FP TAB STB22NM60N STF22NM60N 650 V 0.22 16 A 3 2 STP22NM60N 1 TO-220 100% avalanche tested D(2, TAB) Low input capacitance and gate charg... See More ⇒

Detailed specifications: STB20NM50T4, STB20NM60-1, STB20NM60T4, STB21N90K5, STB21NM50N, STB21NM50N-1, STB21NM60N, STB21NM60N-1, 12N60, STB23NM60N, STB24N60DM2, STB24N60M2, STB24N65M2, STB25N80K5, STB25NM50N-1, STB25NM60N, STB25NM60N-1

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