STB33N65M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB33N65M2
Marking Code: 33N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 24 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 41.5 nC
Rise Time (tr): 11.5 nS
Drain-Source Capacitance (Cd): 75 pF
Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm
Package: D2PAK
STB33N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB33N65M2 Datasheet (PDF)
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF1404 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
