All MOSFET. STB40N20 Datasheet

 

STB40N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB40N20
   Marking Code: B40N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: D2PAK

 STB40N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB40N20 Datasheet (PDF)

 ..1. Size:501K  st
 stb40n20 stb40n20 stp40n20 stp40n20fp stw40n20 stp40n20 stw40n20.pdf

STB40N20 STB40N20

STP40N20 - STF40N20STB40N20 - STW40N20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PW3STB40N20 200V

 8.1. Size:316K  st
 stb40ns15t4.pdf

STB40N20 STB40N20

STB40NS15N-channel 150V - 0.045 - 40A - D2PAKMESH OVERLAY Power MOSFETFeaturesRDS(on)Type VDSS ID(max)STB40NS15 150V

 8.2. Size:400K  st
 stb40nf10l.pdf

STB40N20 STB40N20

STB40NF10LN-channel 100V - 0.028 - 40A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10L 100V

 8.3. Size:477K  st
 stp40nf20 stf40nf20 stb40nf20 stw40nf20.pdf

STB40N20 STB40N20

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

 8.4. Size:403K  st
 stb40nf10t4.pdf

STB40N20 STB40N20

STB40NF10N-channel 100V - 0.025 - 50A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10 100V

 8.5. Size:393K  st
 stb40nf10lt4.pdf

STB40N20 STB40N20

STB40NF10LN-channel 100V - 0.028 - 40A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10L 100V

 8.6. Size:1189K  st
 stb40n60m2 stp40n60m2 stw40n60m2.pdf

STB40N20 STB40N20

STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous

 8.7. Size:101K  st
 stb40ne03l.pdf

STB40N20 STB40N20

STB40NE03L-20N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) ID TYPICAL R = 0.014 DS(on) EXCEPTIONAL dv/dt CAPABILITYo LOW GATE CHARGE A 100 C APPLICATION ORIENTEDCHARACTERIZATION31 FOR THROUGH-HOLE VERSION CONTACTSALES OFFICED2PAKDESCRIPTIONTO-263This Power MOSFET is the latest development of(suffix T4)SG

 8.8. Size:414K  st
 stb40nf10.pdf

STB40N20 STB40N20

STB40NF10N-channel 100V - 0.025 - 50A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10 100V

 8.9. Size:484K  st
 stb40nf20 stf40nf20 stp40nf20 stw40nf20.pdf

STB40N20 STB40N20

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

 8.10. Size:317K  st
 stb40ns15.pdf

STB40N20 STB40N20

STB40NS15N-channel 150V - 0.045 - 40A - D2PAKMESH OVERLAY Power MOSFETFeaturesRDS(on)Type VDSS ID(max)STB40NS15 150V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AP9578GJ-HF

 

 
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