STB40NS15T4
MOSFET. Datasheet pdf. Equivalent
Type Designator: STB40NS15T4
Marking Code: B40NF15
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 100
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052
Ohm
Package:
D2PAK
STB40NS15T4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB40NS15T4
Datasheet (PDF)
..1. Size:316K st
stb40ns15t4.pdf 
STB40NS15N-channel 150V - 0.045 - 40A - D2PAKMESH OVERLAY Power MOSFETFeaturesRDS(on)Type VDSS ID(max)STB40NS15 150V
5.1. Size:317K st
stb40ns15.pdf
STB40NS15N-channel 150V - 0.045 - 40A - D2PAKMESH OVERLAY Power MOSFETFeaturesRDS(on)Type VDSS ID(max)STB40NS15 150V
8.1. Size:400K st
stb40nf10l.pdf
STB40NF10LN-channel 100V - 0.028 - 40A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10L 100V
8.2. Size:477K st
stp40nf20 stf40nf20 stb40nf20 stw40nf20.pdf
STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V
8.3. Size:403K st
stb40nf10t4.pdf
STB40NF10N-channel 100V - 0.025 - 50A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10 100V
8.4. Size:393K st
stb40nf10lt4.pdf
STB40NF10LN-channel 100V - 0.028 - 40A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10L 100V
8.6. Size:1189K st
stb40n60m2 stp40n60m2 stw40n60m2.pdf
STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous
8.7. Size:101K st
stb40ne03l.pdf
STB40NE03L-20N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) ID TYPICAL R = 0.014 DS(on) EXCEPTIONAL dv/dt CAPABILITYo LOW GATE CHARGE A 100 C APPLICATION ORIENTEDCHARACTERIZATION31 FOR THROUGH-HOLE VERSION CONTACTSALES OFFICED2PAKDESCRIPTIONTO-263This Power MOSFET is the latest development of(suffix T4)SG
8.8. Size:414K st
stb40nf10.pdf
STB40NF10N-channel 100V - 0.025 - 50A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB40NF10 100V
8.9. Size:484K st
stb40nf20 stf40nf20 stp40nf20 stw40nf20.pdf
STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V
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