STB57N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB57N65M5
Marking Code: 57N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 98 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.063 Ohm
Package: D2PAK
STB57N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB57N65M5 Datasheet (PDF)
stb57n65m5 stf57n65m5 sti57n65m5 stp57n65m5.pdf
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET in IPAK, TO-220, TO-220FP and DPAK packagesDatasheet production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max313STB57N65M521DPAKSTF57N65M5710 V
stb57n65m5.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB57N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
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