All MOSFET. STB60NE06L-16T4 Datasheet

 

STB60NE06L-16T4 Datasheet and Replacement


   Type Designator: STB60NE06L-16T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: D2PAK
 

 STB60NE06L-16T4 substitution

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STB60NE06L-16T4 Datasheet (PDF)

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 stb60ne06l-16t4.pdf pdf_icon

STB60NE06L-16T4

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V

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 stb60ne06l-16.pdf pdf_icon

STB60NE06L-16T4

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V

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 stb60ne03l-12.pdf pdf_icon

STB60NE06L-16T4

STB60NE03L-12N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTB60NE03L-12 30 V

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STB60NE06L-16T4

STB60NE03L-10N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(o n) IDSTB60NE03L-10 30 V

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Datasheet: STB55NF03L-1 , STB55NF06L-1 , STB55NF06LT4 , STB55NF06T4 , STB57N65M5 , STB5NK50Z-1 , STB5NK50ZT4 , STB5NK52ZD-1 , AON7403 , STB60NF06-1 , STB60NF06LT4 , STB60NF06T4 , STB60NF10-1 , STB60NF10T4 , STB60NH02LT4 , STB6N60M2 , STB6N62K3 .

History: SI8100DB

Keywords - STB60NE06L-16T4 MOSFET datasheet

 STB60NE06L-16T4 cross reference
 STB60NE06L-16T4 equivalent finder
 STB60NE06L-16T4 lookup
 STB60NE06L-16T4 substitution
 STB60NE06L-16T4 replacement

 

 
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