All MOSFET. STB60NE06L-16T4 Datasheet

 

STB60NE06L-16T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB60NE06L-16T4
   Marking Code: B60NE06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: D2PAK

 STB60NE06L-16T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB60NE06L-16T4 Datasheet (PDF)

 0.1. Size:446K  st
stb60ne06l-16t4.pdf

STB60NE06L-16T4 STB60NE06L-16T4

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V

 1.1. Size:450K  st
stb60ne06l-16.pdf

STB60NE06L-16T4 STB60NE06L-16T4

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V

 6.1. Size:51K  st
stb60ne03l-12.pdf

STB60NE06L-16T4 STB60NE06L-16T4

STB60NE03L-12N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTB60NE03L-12 30 V

 6.2. Size:99K  st
stb60ne03l.pdf

STB60NE06L-16T4 STB60NE06L-16T4

STB60NE03L-10N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(o n) IDSTB60NE03L-10 30 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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