STB60NE06L-16T4 Datasheet and Replacement
Type Designator: STB60NE06L-16T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 155 nS
Cossⓘ - Output Capacitance: 590 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: D2PAK
STB60NE06L-16T4 substitution
STB60NE06L-16T4 Datasheet (PDF)
stb60ne06l-16t4.pdf

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V
stb60ne06l-16.pdf

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V
stb60ne03l-12.pdf

STB60NE03L-12N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTB60NE03L-12 30 V
stb60ne03l.pdf

STB60NE03L-10N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(o n) IDSTB60NE03L-10 30 V
Datasheet: STB55NF03L-1 , STB55NF06L-1 , STB55NF06LT4 , STB55NF06T4 , STB57N65M5 , STB5NK50Z-1 , STB5NK50ZT4 , STB5NK52ZD-1 , MMD60R360PRH , STB60NF06-1 , STB60NF06LT4 , STB60NF06T4 , STB60NF10-1 , STB60NF10T4 , STB60NH02LT4 , STB6N60M2 , STB6N62K3 .
History: JFPC5N80C | NCE30H12K
Keywords - STB60NE06L-16T4 MOSFET datasheet
STB60NE06L-16T4 cross reference
STB60NE06L-16T4 equivalent finder
STB60NE06L-16T4 lookup
STB60NE06L-16T4 substitution
STB60NE06L-16T4 replacement
History: JFPC5N80C | NCE30H12K



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