STB60NE06L-16T4 Specs and Replacement

Type Designator: STB60NE06L-16T4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 155 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: D2PAK

STB60NE06L-16T4 substitution

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STB60NE06L-16T4 datasheet

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STB60NE06L-16T4

STB60NE06L-16 N-channel 60V - 0.014 - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB60NE06L-16 60V ... See More ⇒

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STB60NE06L-16T4

STB60NE06L-16 N-channel 60V - 0.014 - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB60NE06L-16 60V ... See More ⇒

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STB60NE06L-16T4

STB60NE03L-12 N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB60NE03L-12 30 V ... See More ⇒

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STB60NE06L-16T4

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Detailed specifications: STB55NF03L-1, STB55NF06L-1, STB55NF06LT4, STB55NF06T4, STB57N65M5, STB5NK50Z-1, STB5NK50ZT4, STB5NK52ZD-1, RU7088R, STB60NF06-1, STB60NF06LT4, STB60NF06T4, STB60NF10-1, STB60NF10T4, STB60NH02LT4, STB6N60M2, STB6N62K3

Keywords - STB60NE06L-16T4 MOSFET specs

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