STB7ANM60N Specs and Replacement

Type Designator: STB7ANM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 24.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: D2PAK

STB7ANM60N substitution

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STB7ANM60N datasheet

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 stb7anm60n std7anm60n.pdf pdf_icon

STB7ANM60N

STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 typ., MDmesh II Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ Tjmax RDS(on) max. ID TAB STB7ANM60N 650 V 0.9 5 A TAB STD7ANM60N 2 Designed for automotive applications and 3 3 1 1 AEC-Q101 qualified 2 DPAK D PAK 100% avalanche tested ... See More ⇒

Detailed specifications: STB70NF3LLT4, STB70NFS03LT4, STB70NH03LT4, STB75N20, STB75NF75LT4, STB75NF75T4, STB75NH02LT4, STB76NF80, AO3400, STB7NK80ZT4, STB80NE03L-06T4, STB80NF03L-04-1, STB80NF06, STB80NF10T4, STB80NF55-06-1, STB80NF55-06T, STB80NF55-06T4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.