All MOSFET. STB7ANM60N Datasheet

 

STB7ANM60N Datasheet and Replacement


   Type Designator: STB7ANM60N
   Marking Code: 7ANM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 24.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: D2PAK
 

 STB7ANM60N substitution

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STB7ANM60N Datasheet (PDF)

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STB7ANM60N

STB7ANM60N, STD7ANM60NAutomotive-grade N-channel 600 V, 5 A, 0.84 typ., MDmesh II Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeatures Order codes VDS @ Tjmax RDS(on) max. IDTABSTB7ANM60N650 V 0.9 5 A TAB STD7ANM60N2 Designed for automotive applications and 3311AEC-Q101 qualified2DPAKD PAK 100% avalanche tested

Datasheet: STB70NF3LLT4 , STB70NFS03LT4 , STB70NH03LT4 , STB75N20 , STB75NF75LT4 , STB75NF75T4 , STB75NH02LT4 , STB76NF80 , IRF3710 , STB7NK80ZT4 , STB80NE03L-06T4 , STB80NF03L-04-1 , STB80NF06 , STB80NF10T4 , STB80NF55-06-1 , STB80NF55-06T , STB80NF55-06T4 .

History: SIS429DNT | FMH17N60ES

Keywords - STB7ANM60N MOSFET datasheet

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