STB7ANM60N MOSFET. Datasheet pdf. Equivalent
Type Designator: STB7ANM60N
Marking Code: 7ANM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 24.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: D2PAK
STB7ANM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB7ANM60N Datasheet (PDF)
stb7anm60n std7anm60n.pdf
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STB7ANM60N, STD7ANM60NAutomotive-grade N-channel 600 V, 5 A, 0.84 typ., MDmesh II Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeatures Order codes VDS @ Tjmax RDS(on) max. IDTABSTB7ANM60N650 V 0.9 5 A TAB STD7ANM60N2 Designed for automotive applications and 3311AEC-Q101 qualified2DPAKD PAK 100% avalanche tested
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![STB7ANM60N](https://alltransistors.com/images/us.png)
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