STB80NE03L-06T4 Specs and Replacement

Type Designator: STB80NE03L-06T4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 260 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: D2PAK

STB80NE03L-06T4 substitution

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STB80NE03L-06T4 datasheet

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STB80NE03L-06T4

STB80NE03L-06 N-channel 30V - 0.005 - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID STB80NE03L-06 30V ... See More ⇒

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STB80NE03L-06T4

STB80NE03L-06 N-channel 30V - 0.005 - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID STB80NE03L-06 30V ... See More ⇒

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STB80NE03L-06T4

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Detailed specifications: STB70NH03LT4, STB75N20, STB75NF75LT4, STB75NF75T4, STB75NH02LT4, STB76NF80, STB7ANM60N, STB7NK80ZT4, IRF3710, STB80NF03L-04-1, STB80NF06, STB80NF10T4, STB80NF55-06-1, STB80NF55-06T, STB80NF55-06T4, STB80NF55-08-1, STB80NF55L-08

Keywords - STB80NE03L-06T4 MOSFET specs

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