All MOSFET. STB80NE03L-06T4 Datasheet

 

STB80NE03L-06T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB80NE03L-06T4
   Marking Code: B80NE03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 260 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: D2PAK

 STB80NE03L-06T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB80NE03L-06T4 Datasheet (PDF)

 0.1. Size:431K  st
 stb80ne03l-06t4.pdf

STB80NE03L-06T4 STB80NE03L-06T4

STB80NE03L-06N-channel 30V - 0.005 - 85A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NE03L-06 30V

 1.1. Size:436K  st
 stb80ne03l-06.pdf

STB80NE03L-06T4 STB80NE03L-06T4

STB80NE03L-06N-channel 30V - 0.005 - 85A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NE03L-06 30V

 4.1. Size:84K  st
 stb80ne03l.pdf

STB80NE03L-06T4 STB80NE03L-06T4

STB80NE03L-06 N - CHANNEL 30V - 0.005 - 80A - D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(o n) IDSTB80NE03L-06 30 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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