All MOSFET. STC4606 Datasheet

 

STC4606 Datasheet and Replacement


   Type Designator: STC4606
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.1 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8
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STC4606 Datasheet (PDF)

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STC4606

STC4606 N&P Pair Enhancement Mode MOSFET 6.0A / -6.0A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

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STC4606

STC4614 N&P Pair Enhancement Mode MOSFET 10.0A / -10.0A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STB4NK60ZT4 | IRLR024 | CED05N8 | BUZ84 | TK290P60Y | AON6794 | BL10N70-A

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