All MOSFET. STC4606 Datasheet

 

STC4606 Datasheet and Replacement


   Type Designator: STC4606
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.1 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8
 

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STC4606 Datasheet (PDF)

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STC4606

STC4606 N&P Pair Enhancement Mode MOSFET 6.0A / -6.0A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

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STC4606

STC4614 N&P Pair Enhancement Mode MOSFET 10.0A / -10.0A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

Datasheet: IRFU4615PBF , IRFU4620PBF , IRFU48ZPBF , IRFU5305PBF , STC4516 , STC4539 , STC4545 , STC4567 , IRF540 , STC4614 , STC6332 , STC6602 , STC6614 , STD100N03LT4 , STD100N10F7 , STD100NH02LT4 , STD100NH03LT4 .

History: STL65DN3LLH5 | MS60P02NE

Keywords - STC4606 MOSFET datasheet

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