STC4606 MOSFET Datasheet: NP-Ch, 30V, 6.5A. Full specification with pinout and replacement list

STC4606 Specs and Replacement

Type Designator: STC4606

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOP-8

STC4606 substitution

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STC4606 datasheet

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STC4606 N&P Pair Enhancement Mode MOSFET 6.0A / -6.0A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application ... See More ⇒

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STC4614 N&P Pair Enhancement Mode MOSFET 10.0A / -10.0A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application... See More ⇒

Detailed specifications: IRFU4615PBF, IRFU4620PBF, IRFU48ZPBF, IRFU5305PBF, STC4516, STC4539, STC4545, STC4567, IRF540N, STC4614, STC6332, STC6602, STC6614, STD100N03LT4, STD100N10F7, STD100NH02LT4, STD100NH03LT4