STD100NH02LT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD100NH02LT4
Marking Code: D100NH02L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 62 nC
trⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 1020 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: DPAK
STD100NH02LT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD100NH02LT4 Datasheet (PDF)
std100nh02lt4.pdf
STD100NH02LSTD100NH02L-1N-channel 24V - 0.0042 - 60A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH02L 24V
std100nh02l.pdf
STD100NH02LSTD100NH02L-1N-channel 24V - 0.0042 - 60A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH02L 24V
std100nh03lt4.pdf
STD100NH03LN-channel 30V - 0.005 - 60A - DPAKSTripFET III Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH03L 30V
std100n3lf3.pdf
STD100N3LF3N-channel 30 V, 0.0045 , 80 A, DPAKplanar STripFET II Power MOSFETFeaturesType VDSSS RDS(on) ID PwSTD100N3LF3 30 V
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2
std100n03lt4.pdf
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std100n10f7.pdf
isc N-Channel MOSFET Transistor STD100N10F7FEATURESStatic drain-source on-resistance:RDS(on)8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 3SK41
History: 3SK41
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