STD110N8F6 MOSFET Datasheet: N-Ch, 80V, 80A. Full specification with pinout and replacement list

STD110N8F6 Specs and Replacement

Type Designator: STD110N8F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: DPAK

STD110N8F6 substitution

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STD110N8F6 datasheet

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std110n8f6.pdf pdf_icon

STD110N8F6 N-channel 80 V, 0.0056 typ.,80 A, STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STD110N8F6 80 V 0.0065 80 A 167 W 3 2 Very low on-resistance 1 Very low gate charge High avalanche ruggedness DPAK Low gate drive power loss Applications Figure 1. Internal schematic diagr... See More ⇒

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STD110NH02L N-channel 24V - 0.0044 - 80A - DPAK STripFET III Power MOSFET General features VDSSS RDS(on) ID Type STD110NH02L 24V ... See More ⇒

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STD110NH02L N-channel 24V - 0.0044 - 80A - DPAK STripFET III Power MOSFET General features VDSSS RDS(on) ID Type STD110NH02L 24V ... See More ⇒

7.3. Size:131K onsemi
ntd110n02rg std110n02rt4g.pdf pdf_icon

NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss http //onsemi.com Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converter... See More ⇒