All MOSFET. STD110N8F6 Datasheet

 

STD110N8F6 Datasheet and Replacement


   Type Designator: STD110N8F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DPAK
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STD110N8F6 Datasheet (PDF)

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 std110n8f6.pdf pdf_icon

STD110N8F6

STD110N8F6N-channel 80 V, 0.0056 typ.,80 A, STripFET F6 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTTABSTD110N8F6 80 V 0.0065 80 A 167 W32 Very low on-resistance 1 Very low gate charge High avalanche ruggedness DPAK Low gate drive power lossApplicationsFigure 1. Internal schematic diagr

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 std110nh02l.pdf pdf_icon

STD110N8F6

STD110NH02LN-channel 24V - 0.0044 - 80A - DPAKSTripFET III Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD110NH02L 24V

 7.2. Size:479K  st
 std110nh02lt4.pdf pdf_icon

STD110N8F6

STD110NH02LN-channel 24V - 0.0044 - 80A - DPAKSTripFET III Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD110NH02L 24V

 7.3. Size:131K  onsemi
 ntd110n02rg std110n02rt4g.pdf pdf_icon

STD110N8F6

NTD110N02R, STD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converter

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Keywords - STD110N8F6 MOSFET datasheet

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