All MOSFET. STD1HN60K3 Datasheet

 

STD1HN60K3 Datasheet and Replacement


   Type Designator: STD1HN60K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: DPAK
 

 STD1HN60K3 substitution

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STD1HN60K3 Datasheet (PDF)

 ..1. Size:1441K  st
 std1hn60k3 stu1hn60k3.pdf pdf_icon

STD1HN60K3

STD1HN60K3, STU1HN60K3N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS max ID PTOTSTD1HN60K3TABTAB600 V 8 1.2 A 27 WSTU1HN60K333121 100% avalanche testedDPAKIPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac

 8.1. Size:268K  st
 std1hnc60.pdf pdf_icon

STD1HN60K3

STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V

 8.2. Size:190K  st
 std1hnc60t4.pdf pdf_icon

STD1HN60K3

STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V

Datasheet: STD16N65M2 , STD16NF06L-1 , STD16NF06LT4 , STD16NF06T4 , STD17NF03L-1 , STD17NF03LT4 , STD18N65M5 , STD19NF20 , TK10A60D , STD1HNC60T4 , STD1NK60-1 , STD1NK60T4 , STD1NK80Z-1 , STD1NK80ZT4 , STD20NF06LT4 , STD20NF06T4 , STD20NF10T4 .

History: IRFI9540GP | IRF9151 | FCH099N60E | RU30P40M3 | AP60P20Q | STD25NF10 | 2SK2602

Keywords - STD1HN60K3 MOSFET datasheet

 STD1HN60K3 cross reference
 STD1HN60K3 equivalent finder
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 STD1HN60K3 replacement

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