STD1HN60K3 PDF and Equivalents Search

 

STD1HN60K3 Specs and Replacement

Type Designator: STD1HN60K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: DPAK

STD1HN60K3 substitution

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STD1HN60K3 datasheet

 ..1. Size:1441K  st
 std1hn60k3 stu1hn60k3.pdf pdf_icon

STD1HN60K3

STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packages Datasheet - production data Features RDS(on) Order codes VDS max ID PTOT STD1HN60K3 TAB TAB 600 V 8 1.2 A 27 W STU1HN60K3 3 3 1 2 1 100% avalanche tested DPAK IPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac... See More ⇒

 8.1. Size:268K  st
 std1hnc60.pdf pdf_icon

STD1HN60K3

STD1HNC60 N-CHANNEL 600V - 4 - 2A - IPAK/DPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD1HNC60 600 V ... See More ⇒

 8.2. Size:190K  st
 std1hnc60t4.pdf pdf_icon

STD1HN60K3

STD1HNC60 N-CHANNEL 600V - 4 - 2A - IPAK/DPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD1HNC60 600 V ... See More ⇒

Detailed specifications: STD16N65M2, STD16NF06L-1, STD16NF06LT4, STD16NF06T4, STD17NF03L-1, STD17NF03LT4, STD18N65M5, STD19NF20, TK10A60D, STD1HNC60T4, STD1NK60-1, STD1NK60T4, STD1NK80Z-1, STD1NK80ZT4, STD20NF06LT4, STD20NF06T4, STD20NF10T4

Keywords - STD1HN60K3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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