STD1HN60K3 Datasheet and Replacement
Type Designator: STD1HN60K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: DPAK
STD1HN60K3 substitution
STD1HN60K3 Datasheet (PDF)
std1hn60k3 stu1hn60k3.pdf
STD1HN60K3, STU1HN60K3N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS max ID PTOTSTD1HN60K3TABTAB600 V 8 1.2 A 27 WSTU1HN60K333121 100% avalanche testedDPAKIPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac
std1hnc60.pdf
STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V
std1hnc60t4.pdf
STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V
Datasheet: STD16N65M2 , STD16NF06L-1 , STD16NF06LT4 , STD16NF06T4 , STD17NF03L-1 , STD17NF03LT4 , STD18N65M5 , STD19NF20 , IRFZ24N , STD1HNC60T4 , STD1NK60-1 , STD1NK60T4 , STD1NK80Z-1 , STD1NK80ZT4 , STD20NF06LT4 , STD20NF06T4 , STD20NF10T4 .
History: R6035ENZ | TK100A06N1 | FS18SM-14A | WMK18N50C4 | WMLL013N08HGS
Keywords - STD1HN60K3 MOSFET datasheet
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History: R6035ENZ | TK100A06N1 | FS18SM-14A | WMK18N50C4 | WMLL013N08HGS
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