STD25NF10LT4
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD25NF10LT4
Marking Code: D25NF10L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
DPAK
STD25NF10LT4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD25NF10LT4
Datasheet (PDF)
..1. Size:426K st
std25nf10l std25nf10lt4.pdf
STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V
4.1. Size:433K st
std25nf10l.pdf
STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V
4.2. Size:650K st
std25nf10la.pdf
STD25NF10LAN-channel 100 V, 0.030 , 25 A DPAKSTripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTD25NF10LA 100 V
4.3. Size:285K inchange semiconductor
std25nf10la.pdf
isc N-Channel MOSFET Transistor STD25NF10LAFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 35m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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