All MOSFET. STD28P3LLH6 Datasheet

 

STD28P3LLH6 Datasheet and Replacement


   Type Designator: STD28P3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: DPAK
 

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STD28P3LLH6 Datasheet (PDF)

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STD28P3LLH6

STD28P3LLH6Automotive P-channel 30 V, 0.024 typ., 12 A, STripFET VIDeepGATE Power MOSFET in a DPAK packageDatasheet-target specificationFeaturesRDS(on) Order code VDS max ID PTOTTABSTD28P3LLH6 30 V 0.030 (1) 12 A 40 W321. @ VGS= 10 V1 Designed for Automotive applicationsDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)

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STD28P3LLH6

STD2805Low voltage fast-switching PNP power transistorPreliminary DataFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 33package in tape & reel (suffix T4)211 Through-hole IPAK (TO-251) power package TO-252 TO-251in tube (suffix -1)DPAK IP

 9.2. Size:259K  inchange semiconductor
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STD28P3LLH6

isc Silicon PNP Power Transistor STD2805DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.6V(Max)( I = -5A; I = -0.25A)CE(sat C BDC Current Gain -h = 85(Min)@ I = -5AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficienc

Datasheet: STD24N06L , STD24N06LT4G , STD25N10F7 , STD25NF10L , STD25NF10LT4 , STD25NF10T4 , STD25NF20 , STD26P3LLH6 , 2N60 , STD2955T4G , STD2LN60K3 , STD2N105K5 , STD2N80K5 , STD2N95K5 , STD2NK70Z-1 , STD2NK70ZT4 , STD2NK90ZT4 .

Keywords - STD28P3LLH6 MOSFET datasheet

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