All MOSFET. STD35NF06T4 Datasheet

 

STD35NF06T4 Datasheet and Replacement


   Type Designator: STD35NF06T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DPAK
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STD35NF06T4 Datasheet (PDF)

 ..1. Size:313K  st
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STD35NF06T4

STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V

 ..2. Size:771K  cn vbsemi
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STD35NF06T4

STD35NF06T4www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 5.1. Size:646K  st
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STD35NF06T4

STD35NF06LN-channel 60 V, 0.014 , 35 A STripFET II Power MOSFET in a DPAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) IDTABSTD35NF06LT4 60V

 5.2. Size:322K  st
 std35nf06.pdf pdf_icon

STD35NF06T4

STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V

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History: LSF65R570GT | CSD16342Q5A

Keywords - STD35NF06T4 MOSFET datasheet

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