STD50NH02LT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD50NH02LT4
Marking Code: D50NH02L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DPAK
STD50NH02LT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD50NH02LT4 Datasheet (PDF)
std50nh02l-1 std50nh02lt4.pdf
STD50NH02LSTD50NH02L-1N-channel 24V - 0.0085 - 50A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD50NH02L-1 24V
std50nh02l std50nh02l-1.pdf
STD50NH02LSTD50NH02L-1N-channel 24V - 0.0085 - 50A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD50NH02L-1 24V
std50nh02l.pdf
STD50NH02LN-CHANNEL 24V - 0.0085 - 50A DPAK/IPAKSTripFET III POWER MOSFETTYPE VDSS RDS(on) IDSTD50NH02L 24 V
std50n03l std50n03l-1.pdf
STD50N03LSTD50N03L-1N-CHANNEL 30V - 9.2m - 40A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD50N03L 30V 10.5m 40ASTD50N03L-1 30V 10.5m 40A332 RDS(on)*Qg industrys benchmark 1 1 Conduction losses reducedDPAKIPAK Switching losses reduced Low threshold deviceDescriptionThis product utilizes the latest advan
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918