STD52P3LLH6 Datasheet and Replacement
Type Designator: STD52P3LLH6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 112 nS
Cossⓘ - Output Capacitance: 414 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DPAK
STD52P3LLH6 substitution
STD52P3LLH6 Datasheet (PDF)
std52p3llh6.pdf
STD52P3LLH6 P-channel 30 V, 0.01 typ., 52 A, STripFET H6 Power MOSFET in a DPAK package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology, Figure 1
Datasheet: STD4N80K5 , STD4NK100Z , STD4NK50ZT4 , STD4NK60ZT4 , STD4NK80ZT4 , STD4NS25T4 , STD50NH02L-1 , STD50NH02LT4 , 7N65 , STD5406N , STD5406NT4G , STD5407N , STD5407NT4G , STD55NH2LLT4 , STD5N20LT4 , STD5N60M2 , STD5N95K5 .
History: CED83A3G
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: CED83A3G
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