STD52P3LLH6 Specs and Replacement

Type Designator: STD52P3LLH6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 112 nS

Cossⓘ - Output Capacitance: 414 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DPAK

STD52P3LLH6 substitution

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STD52P3LLH6 datasheet

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STD52P3LLH6

STD52P3LLH6 P-channel 30 V, 0.01 typ., 52 A, STripFET H6 Power MOSFET in a DPAK package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology, Figure 1... See More ⇒

Detailed specifications: STD4N80K5, STD4NK100Z, STD4NK50ZT4, STD4NK60ZT4, STD4NK80ZT4, STD4NS25T4, STD50NH02L-1, STD50NH02LT4, 7N65, STD5406N, STD5406NT4G, STD5407N, STD5407NT4G, STD55NH2LLT4, STD5N20LT4, STD5N60M2, STD5N95K5

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