All MOSFET. STD52P3LLH6 Datasheet

 

STD52P3LLH6 Datasheet and Replacement


   Type Designator: STD52P3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 414 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DPAK
 

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STD52P3LLH6 Datasheet (PDF)

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STD52P3LLH6

STD52P3LLH6 P-channel 30 V, 0.01 typ., 52 A, STripFET H6 Power MOSFET in a DPAK package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology, Figure 1

Datasheet: STD4N80K5 , STD4NK100Z , STD4NK50ZT4 , STD4NK60ZT4 , STD4NK80ZT4 , STD4NS25T4 , STD50NH02L-1 , STD50NH02LT4 , STP75NF75 , STD5406N , STD5406NT4G , STD5407N , STD5407NT4G , STD55NH2LLT4 , STD5N20LT4 , STD5N60M2 , STD5N95K5 .

History: NVMTS0D6N04C

Keywords - STD52P3LLH6 MOSFET datasheet

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