All MOSFET. STD52P3LLH6 Datasheet

 

STD52P3LLH6 Datasheet and Replacement


   Type Designator: STD52P3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 414 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DPAK
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STD52P3LLH6 Datasheet (PDF)

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STD52P3LLH6

STD52P3LLH6 P-channel 30 V, 0.01 typ., 52 A, STripFET H6 Power MOSFET in a DPAK package Datasheet - preliminary data Very low on-resistance Very low gate charge High avalanche Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology, Figure 1

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HSBA4006 | MMBF5457 | 2N3797 | AONS66408 | IPD90N06S4-05 | CS7N80P | IXFN110N60P3

Keywords - STD52P3LLH6 MOSFET datasheet

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