STD90NH02LT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD90NH02LT4
Marking Code: D90NH02L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 47.5 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DPAK
STD90NH02LT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD90NH02LT4 Datasheet (PDF)
std90nh02lt4.pdf
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std90nh02l.pdf
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std90n03l std90n03l-1.pdf
STD90N03LSTD90N03L-1N-channel 30V - 0.005 - 80A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD90N03L 30V 0.0057 80A (1)STD90N03L-1 30V 0.0057 80A (1)332 11. Pulse width limited by safe operating area1 RDS(on)*Qg industrys benchmark Conduction losses reducedIPAKDPAK Switching losses reduced Low threshold
std90n02l-1 std90n02l.pdf
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std90n02l std90n02l-1.pdf
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std90n4f3.pdf
STD90N4F3www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM R
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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