STD95NH02LT4 Datasheet and Replacement
Type Designator: STD95NH02LT4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 990 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DPAK
STD95NH02LT4 substitution
STD95NH02LT4 Datasheet (PDF)
std95nh02lt4.pdf
STD95NH02L-1STD95NH02LN-channel 24V - 0.0039 - 80A - DPAK - IPAKUltra low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTD95NH02L 24V
std95nh02l std95nh02l-1.pdf
STD95NH02L-1STD95NH02LN-channel 24V - 0.0039 - 80A - DPAK - IPAKUltra low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTD95NH02L 24V
std95nh02l.pdf
STD95NH02Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 10030 95nC0.0045 at VGS = 4.5 V 97APPLICATIONSDTO-251 OR-ing Server DC/DCGSG D STop ViewN-Channel MOSFETA
std95n4f3 stp95n4f3.pdf
STD95N4F3STP95N4F3N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220STripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTD95N4F3 40 V
Datasheet: STD80N6F6 , STD8N80K5 , STD8NF25 , STD8NM60N-1 , STD90N02L , STD90N02L-1 , STD90NH02LT4 , STD95N04 , 7N60 , STD96N3LLH6 , STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , STE139N65M5 .
Keywords - STD95NH02LT4 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SQS484EN | CEM6056
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