All MOSFET. STD96N3LLH6 Datasheet

 

STD96N3LLH6 Datasheet and Replacement


   Type Designator: STD96N3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: DPAK
 

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STD96N3LLH6 Datasheet (PDF)

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STD96N3LLH6

STD96N3LLH6N-channel 30 V, 0.0037 , 80 A, DPAKSTripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD96N3LLH6 30 V 0.0042 80 A RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on)1 High avalanche ruggedness Low gate drive power lossesDPAKApplication Switching applications AutomotiveFigure 1. Internal sc

Datasheet: STD8N80K5 , STD8NF25 , STD8NM60N-1 , STD90N02L , STD90N02L-1 , STD90NH02LT4 , STD95N04 , STD95NH02LT4 , RU7088R , STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , STE139N65M5 , STE145N65M5 .

History: GN10N65A4 | 2SK3212 | CEB85A3

Keywords - STD96N3LLH6 MOSFET datasheet

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