STD96N3LLH6 Specs and Replacement

Type Designator: STD96N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 91 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: DPAK

STD96N3LLH6 substitution

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STD96N3LLH6 datasheet

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STD96N3LLH6

STD96N3LLH6 N-channel 30 V, 0.0037 , 80 A, DPAK STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STD96N3LLH6 30 V 0.0042 80 A RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 1 High avalanche ruggedness Low gate drive power losses DPAK Application Switching applications Automotive Figure 1. Internal sc... See More ⇒

Detailed specifications: STD8N80K5, STD8NF25, STD8NM60N-1, STD90N02L, STD90N02L-1, STD90NH02LT4, STD95N04, STD95NH02LT4, IRFZ48N, STD9HN65M2, STD9N40M2, STD9N60M2, STD9N65M2, STD9NM40N, STD9NM50N-1, STE139N65M5, STE145N65M5

Keywords - STD96N3LLH6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.