All MOSFET. STD96N3LLH6 Datasheet

 

STD96N3LLH6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD96N3LLH6
   Marking Code: 96N3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: DPAK

 STD96N3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD96N3LLH6 Datasheet (PDF)

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 std96n3llh6.pdf

STD96N3LLH6 STD96N3LLH6

STD96N3LLH6N-channel 30 V, 0.0037 , 80 A, DPAKSTripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD96N3LLH6 30 V 0.0042 80 A RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on)1 High avalanche ruggedness Low gate drive power lossesDPAKApplication Switching applications AutomotiveFigure 1. Internal sc

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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