All MOSFET. STD9N40M2 Datasheet

 

STD9N40M2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD9N40M2
   Marking Code: 9N40M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.8 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: DPAK

 STD9N40M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD9N40M2 Datasheet (PDF)

 ..1. Size:841K  st
std9n40m2.pdf

STD9N40M2
STD9N40M2

STD9N40M2N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTD9N40M2 450 V 0.8 6 ATAB Extremely low gate charge3 Lower RDS(on) x area vs previous generation1 Low gate input resistanceDPAK 100% avalanche tested Zener-protectedApplica

 9.1. Size:896K  st
std9nm60n stf9nm60n stp9nm60n.pdf

STD9N40M2
STD9N40M2

STD9NM60NSTF9NM60N, STP9NM60NN-channel 600 V, 0.63 , 6.5 A TO-220, TO-220FP, DPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.33221STD9NM60N1TO-220FP TO-220STF9NM60N 650 V

 9.2. Size:383K  st
std9n10.pdf

STD9N40M2
STD9N40M2

STD9N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD9N10 100 V

 9.3. Size:66K  st
std9n10l.pdf

STD9N40M2
STD9N40M2

STD9N10LN - CHANNEL 100V - 0.22 - 9A IPAK/DPAK POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD9N10L 100 V

 9.4. Size:1473K  st
std9n60m2 stp9n60m2 stu9n60m2.pdf

STD9N40M2
STD9N40M2

STD9N60M2, STP9N60M2, STU9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1DPAK STD9N60M2STP9N60M2 650 V 0.78 5.5 ATABSTU9N60M2TAB Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation2 2

 9.5. Size:963K  st
std9nm50n.pdf

STD9N40M2
STD9N40M2

STD9NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAKFeaturesOrder code VDSS@TJMAX RDS(on)max. IDSTD9NM50N 550 V

 9.6. Size:1352K  st
std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf

STD9N40M2
STD9N40M2

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDS max ID31DPAK STD9N65M2321 STF9N65M2650 V 0.9 5 ASTP9N65M2TO-220FPTAB STU9N65M2TAB Extremely low gate charge32 Excellent output capacit

 9.7. Size:485K  st
std9nm50n std9nm50n-1 stp9nm50n stf9nm50n.pdf

STD9N40M2
STD9N40M2

STD9NM50N - STD9NM50N-1STF9NM50N - STP9NM50NN-channel 500V - 0.47 - 7.5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)323STD9NM50N 550V

 9.8. Size:1072K  st
std9nm40n.pdf

STD9N40M2
STD9N40M2

STD9NM40N, STP9NM40NN-channel 400 V, 0.73 typ., 5.6 A MDmesh II Power MOSFET in DPAK and TO-220 packagesDatasheet production dataFeaturesOrder codes VDSS@TJMAX RDS(on)max. IDSTD9NM40NTAB450 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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