STD9N40M2 Datasheet. Specs and Replacement
Type Designator: STD9N40M2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: DPAK
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STD9N40M2 substitution
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STD9N40M2 datasheet
std9n40m2.pdf
STD9N40M2 N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS(on) max ID STD9N40M2 450 V 0.8 6 A TAB Extremely low gate charge 3 Lower RDS(on) x area vs previous generation 1 Low gate input resistance DPAK 100% avalanche tested Zener-protected Applica... See More ⇒
std9nm60n stf9nm60n stp9nm60n.pdf
STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 , 6.5 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID (@Tjmax) max. 3 3 2 2 1 STD9NM60N 1 TO-220FP TO-220 STF9NM60N 650 V ... See More ⇒
std9n10.pdf
STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD9N10 100 V ... See More ⇒
std9n10l.pdf
STD9N10L N - CHANNEL 100V - 0.22 - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD9N10L 100 V ... See More ⇒
Detailed specifications: STD8NM60N-1, STD90N02L, STD90N02L-1, STD90NH02LT4, STD95N04, STD95NH02LT4, STD96N3LLH6, STD9HN65M2, FTP08N06A, STD9N60M2, STD9N65M2, STD9NM40N, STD9NM50N-1, STE139N65M5, STE145N65M5, STE88N65M5, STF100N10F7
Keywords - STD9N40M2 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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