All MOSFET. STD9N40M2 Datasheet

 

STD9N40M2 Datasheet and Replacement


   Type Designator: STD9N40M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: DPAK
      - MOSFET Cross-Reference Search

 

STD9N40M2 Datasheet (PDF)

 ..1. Size:841K  st
std9n40m2.pdf pdf_icon

STD9N40M2

STD9N40M2N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTD9N40M2 450 V 0.8 6 ATAB Extremely low gate charge3 Lower RDS(on) x area vs previous generation1 Low gate input resistanceDPAK 100% avalanche tested Zener-protectedApplica

 9.1. Size:896K  st
std9nm60n stf9nm60n stp9nm60n.pdf pdf_icon

STD9N40M2

STD9NM60NSTF9NM60N, STP9NM60NN-channel 600 V, 0.63 , 6.5 A TO-220, TO-220FP, DPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.33221STD9NM60N1TO-220FP TO-220STF9NM60N 650 V

 9.2. Size:383K  st
std9n10.pdf pdf_icon

STD9N40M2

STD9N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD9N10 100 V

 9.3. Size:66K  st
std9n10l.pdf pdf_icon

STD9N40M2

STD9N10LN - CHANNEL 100V - 0.22 - 9A IPAK/DPAK POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD9N10L 100 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFI7536G | WMM11N80M3 | FDMS9620S

Keywords - STD9N40M2 MOSFET datasheet

 STD9N40M2 cross reference
 STD9N40M2 equivalent finder
 STD9N40M2 lookup
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