All MOSFET. STE139N65M5 Datasheet

 

STE139N65M5 Datasheet and Replacement


   Type Designator: STE139N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 672 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: ISOTOP
 

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STE139N65M5 Datasheet (PDF)

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STE139N65M5

STE139N65M5N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - preliminary dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE139N65M5 710 V 0.017 W 130 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performanceISOTOP 100% avalanche testedApplicationsFigure 1. Internal schem

Datasheet: STD95NH02LT4 , STD96N3LLH6 , STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , IRF9640 , STE145N65M5 , STE88N65M5 , STF100N10F7 , STF10N105K5 , STF10N60M2 , STF10N80K5 , STF10N95K5 , STF10P6F6 .

History: 2SK2518-01MR | APT6029BLL | AM2394NE | CEU06N7 | APT5030AN | APT38N60BC6 | IRF6614

Keywords - STE139N65M5 MOSFET datasheet

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