All MOSFET. STE139N65M5 Datasheet

 

STE139N65M5 MOSFET. Datasheet pdf. Equivalent

Type Designator: STE139N65M5

SMD Transistor Code: 139N65M5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 672 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 363 nC

Rise Time (tr): 56 nS

Drain-Source Capacitance (Cd): 365 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: ISOTOP

STE139N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STE139N65M5 Datasheet (PDF)

1.1. ste139n65m5.pdf Size:1015K _upd

STE139N65M5
STE139N65M5

STE139N65M5 N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh™ V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE139N65M5 710 V 0.017 W 130 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance ISOTOP • 100% avalanche tested Applications Figure 1. Internal schem

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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