STE139N65M5 Specs and Replacement

Type Designator: STE139N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 672 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 365 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: ISOTOP

STE139N65M5 substitution

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STE139N65M5 datasheet

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STE139N65M5

STE139N65M5 N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE139N65M5 710 V 0.017 W 130 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performance ISOTOP 100% avalanche tested Applications Figure 1. Internal schem... See More ⇒

Detailed specifications: STD95NH02LT4, STD96N3LLH6, STD9HN65M2, STD9N40M2, STD9N60M2, STD9N65M2, STD9NM40N, STD9NM50N-1, K2611, STE145N65M5, STE88N65M5, STF100N10F7, STF10N105K5, STF10N60M2, STF10N80K5, STF10N95K5, STF10P6F6

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