All MOSFET. STE139N65M5 Datasheet

 

STE139N65M5 Datasheet and Replacement


   Type Designator: STE139N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 672 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: ISOTOP
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STE139N65M5 Datasheet (PDF)

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STE139N65M5

STE139N65M5N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - preliminary dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE139N65M5 710 V 0.017 W 130 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performanceISOTOP 100% avalanche testedApplicationsFigure 1. Internal schem

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History: CHM85A3PAGP | TK7P65W | SQ9407EY-T1 | SFFX054Z

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