STE139N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE139N65M5
SMD Transistor Code: 139N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 672 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 363 nC
Rise Time (tr): 56 nS
Drain-Source Capacitance (Cd): 365 pF
Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm
Package: ISOTOP
STE139N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE139N65M5 Datasheet (PDF)
1.1. ste139n65m5.pdf 
Size:1015K _upd
STE139N65M5 N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh™ V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE139N65M5 710 V 0.017 W 130 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance ISOTOP • 100% avalanche tested Applications Figure 1. Internal schem
Datasheet: STD95NH02LT4 , STD96N3LLH6 , STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , FDS4435 , STE145N65M5 , STE88N65M5 , STF100N10F7 , STF10N105K5 , STF10N60M2 , STF10N80K5 , STF10N95K5 , STF10P6F6 .
