All MOSFET. STE139N65M5 Datasheet

 

STE139N65M5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STE139N65M5
   Marking Code: 139N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 672 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 363 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: ISOTOP

 STE139N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE139N65M5 Datasheet (PDF)

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 ste139n65m5.pdf

STE139N65M5 STE139N65M5

STE139N65M5N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - preliminary dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE139N65M5 710 V 0.017 W 130 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performanceISOTOP 100% avalanche testedApplicationsFigure 1. Internal schem

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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