STE139N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE139N65M5
SMD Transistor Code: 139N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 672 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 363 nC
Rise Time (tr): 56 nS
Drain-Source Capacitance (Cd): 365 pF
Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm
Package: ISOTOP
STE139N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE139N65M5 Datasheet (PDF)
1.1. ste139n65m5.pdf 
Size:1015K _upd
STE139N65M5 N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh™ V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE139N65M5 710 V 0.017 W 130 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance ISOTOP • 100% avalanche tested Applications Figure 1. Internal schem
Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
