IRFU6215PBF Datasheet and Replacement
Type Designator: IRFU6215PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm
Package: TO-251
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IRFU6215PBF Datasheet (PDF)
irfr6215pbf irfu6215pbf.pdf

PD-95080AIRFR6215PbFIRFU6215PbFHEXFET Power MOSFETl P-Channell 175C Operating TemperatureDl Surface Mount (IRFR6215)VDSS = -150Vl Straight Lead (IRFU6215)l Advanced Process TechnologyRDS(on) = 0.295l Fast SwitchingGl Fully Avalanche RatedID = -13Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irfr6215pbf irfu6215pbf.pdf

IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175C Operating Temperature VDSS -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) 0.295 Advanced Process Technology Fast Switching ID -13A Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFETs from International Rectifier utilize advan
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SK785 | ELM13401CA | 12N65KG-TF1-T | NP82N055CLE | R5016ANJ | DH150N12B | BSB280N15NZ3G
Keywords - IRFU6215PBF MOSFET datasheet
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History: 2SK785 | ELM13401CA | 12N65KG-TF1-T | NP82N055CLE | R5016ANJ | DH150N12B | BSB280N15NZ3G



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