All MOSFET. IXFN340N07 Datasheet

 

IXFN340N07 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFN340N07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 340 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 490 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 7100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SOT227B

 IXFN340N07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN340N07 Datasheet (PDF)

 ..1. Size:104K  ixys
 ixfn340n07.pdf

IXFN340N07 IXFN340N07

HiPerFETTMIXFN 340N07 VDSS = 70 VPower MOSFETsID25 = 340 ASingle Die MOSFET RDS(on) = 4 mD trr 200 ns N-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C70 VSVDGR TJ = 25C to 150C; RGS = 1 M 70 VGVGS Co

 8.1. Size:128K  ixys
 ixfn34n80.pdf

IXFN340N07 IXFN340N07

HiPerFETTM Power MOSFETsIXFN 34N80 VDSS = 800 VSingle DieMOSFETID25 = 34 ARDS(on) = 0.24 WN-Channel Enhancement Mode DAvalanche Rated, High dv/dt, Low trrtrr 250 nsPreliminary data sheetSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 800 VSVDGR TJ = 25C to 150C; RGS = 1 MW 800 VGVGS Continuous 20 VVGSM Transi

 8.2. Size:570K  ixys
 ixfn34n100.pdf

IXFN340N07 IXFN340N07

IXFN 34N100 VDSS = 1000VHiPerFETTMID25 = 34APower MOSFETsRDS(on) = 0.28Single Die MOSFETDN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trr GSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 1000 VSVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VVGSM Tran

 9.1. Size:192K  ixys
 ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf

IXFN340N07 IXFN340N07

IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1

 9.2. Size:128K  ixys
 ixfn39n90.pdf

IXFN340N07 IXFN340N07

VDSS = 900 VIXFN 39N90HiPerFETTMID25 = 39 APower MOSFETsRDS(on) = 0.22 Single MOSFET DieD trr 250 ns N-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)VDSS TJ = 25C to 150C 900 VE153432VDGR TJ = 25C to 150C; RGS = 1 M 900

 9.3. Size:128K  ixys
 ixfn36n100.pdf

IXFN340N07 IXFN340N07

HiPerFETTMIXFN 36N100 V = 1000VDSSPower MOSFETsID25 = 36ASingle Die MOSFET RDS(on) = 0.24DN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 1000 VSVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VVGSM

Datasheet: IXFN200N07 , IXFN230N10 , IXFN24N100 , IXFN25N90 , IXFN26N90 , IXFN27N80 , IXFN280N07 , IXFN32N60 , 5N65 , IXFN34N80 , IXFN36N100 , IXFN36N60 , IXFN39N90 , IXFN44N50 , IXFN44N50U2 , IXFN44N50U3 , IXFN44N60 .

 

 
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