IXFN340N07 PDF and Equivalents Search

 

IXFN340N07 Specs and Replacement

Type Designator: IXFN340N07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 700 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 340 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 7100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: SOT227B

IXFN340N07 substitution

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IXFN340N07 datasheet

 ..1. Size:104K  ixys
ixfn340n07.pdf pdf_icon

IXFN340N07

HiPerFETTM IXFN 340N07 VDSS = 70 V Power MOSFETs ID25 = 340 A Single Die MOSFET RDS(on) = 4 m D trr 200 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C70 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 70 V G VGS Co... See More ⇒

 8.1. Size:128K  ixys
ixfn34n80.pdf pdf_icon

IXFN340N07

HiPerFETTM Power MOSFETs IXFN 34N80 VDSS = 800 V Single DieMOSFET ID25 = 34 A RDS(on) = 0.24 W N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr trr 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 800 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V VGSM Transi... See More ⇒

 8.2. Size:570K  ixys
ixfn34n100.pdf pdf_icon

IXFN340N07

IXFN 34N100 VDSS = 1000V HiPerFETTM ID25 = 34A Power MOSFETs RDS(on) = 0.28 Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 1000 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V VGSM Tran... See More ⇒

 9.1. Size:192K  ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFN340N07

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1... See More ⇒

Detailed specifications: IXFN200N07 , IXFN230N10 , IXFN24N100 , IXFN25N90 , IXFN26N90 , IXFN27N80 , IXFN280N07 , IXFN32N60 , AOD4184A , IXFN34N80 , IXFN36N100 , IXFN36N60 , IXFN39N90 , IXFN44N50 , IXFN44N50U2 , IXFN44N50U3 , IXFN44N60 .

History: 4611

Keywords - IXFN340N07 MOSFET specs

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