IRFZ24NSPBF Specs and Replacement
Type Designator: IRFZ24NSPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-263
IRFZ24NSPBF substitution
IRFZ24NSPBF datasheet
irfz24nspbf.pdf
PD - 95147 IRFZ24NS/LPbF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ... See More ⇒
irfz24nspbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ24NSPbF FEATURES With TO-263(D2PAK) packaging Surface mount High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒
irfz24ns.pdf
PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... See More ⇒
Detailed specifications: IRFZ10PBF , IRFZ14L , IRFZ14PBF , IRFZ14S , IRFZ14SPBF , IRFZ20PBF , IRFZ24L , IRFZ24NPBF , STF13NM60N , IRFZ24PBF , IRFZ24S , IRFZ24SPBF , IRFZ30PBF , IRFZ34EPBF , IRFZ34L , IRFZ34NLPBF , IRFZ34NPBF .
Keywords - IRFZ24NSPBF MOSFET specs
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