IRFZ40PBF Datasheet and Replacement
Type Designator: IRFZ40PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 67 nC
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 920 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO-220AB
IRFZ40PBF substitution
IRFZ40PBF Datasheet (PDF)
irfz40pbf sihfz40.pdf
IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio
irfz40fi.pdf
IRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRFZ40 50 V
irfz40.pdf
IRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRFZ40 50 V
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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