All MOSFET. IRFZ48ZSPBF Datasheet

 

IRFZ48ZSPBF Datasheet and Replacement


   Type Designator: IRFZ48ZSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-263
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IRFZ48ZSPBF Datasheet (PDF)

 ..1. Size:376K  international rectifier
irfz48zlpbf irfz48zpbf irfz48zspbf.pdf pdf_icon

IRFZ48ZSPBF

PD - 95574AIRFZ48ZPbFIRFZ48ZSPbFIRFZ48ZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 61ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques

 6.1. Size:252K  international rectifier
auirfz48zstrl.pdf pdf_icon

IRFZ48ZSPBF

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

 6.2. Size:252K  international rectifier
auirfz48z auirfz48zs.pdf pdf_icon

IRFZ48ZSPBF

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

 6.3. Size:258K  inchange semiconductor
irfz48zs.pdf pdf_icon

IRFZ48ZSPBF

Isc N-Channel MOSFET Transistor IRFZ48ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2667 | SL2343 | N6004NZ | AFN1034 | MEM614 | CSD15571Q2 | BSZ011NE2LS5I

Keywords - IRFZ48ZSPBF MOSFET datasheet

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