All MOSFET. IRHF57230 Datasheet

 

IRHF57230 Datasheet and Replacement


   Type Designator: IRHF57230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-39
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IRHF57230 Datasheet (PDF)

 ..1. Size:129K  international rectifier
 irhf57230.pdf pdf_icon

IRHF57230

PD - 93788ARADIATION HARDENED IRHF57230POWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3ATO-39International Rectifiers R5TM technology provides

 0.1. Size:127K  international rectifier
 irhf57230se.pdf pdf_icon

IRHF57230

PD - 93857ARADIATION HARDENED IRHF57230SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24 7.0ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for Si

 6.1. Size:187K  international rectifier
 irhf57234se.pdf pdf_icon

IRHF57230

PD-93831BRADIATION HARDENED IRHF57234SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42 5.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single

 7.1. Size:216K  international rectifier
 irhf57214se.pdf pdf_icon

IRHF57230

PD-97063ARADIATION HARDENED IRHF57214SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57214SE 100K Rads (Si) 1.55 2.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single

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History: NCEAP40ND40AG | 2N5566 | STD4NK60ZT4 | AP30N30W | 2341 | 2SK2129 | 10N80B

Keywords - IRHF57230 MOSFET datasheet

 IRHF57230 cross reference
 IRHF57230 equivalent finder
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