IXFN60N60 MOSFET PDF: N-Ch, 600V, 60A. Datasheet. Full specification with pinout and replacement list

IXFN60N60 Specs and Replacement

   Type Designator: IXFN60N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT227B

IXFN60N60 substitution

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IXFN60N60 datasheet

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IXFN 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 53 A Power MOSFET RDS(on) 140 m trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 800 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M ... See More ⇒

9.1. Size:148K ixys
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VDSS = 600 V IXFN 64N60P PolarHVTM HiPerFET ID25 = 50 A Power MOSFET RDS(on) 96 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S... See More ⇒

9.2. Size:144K ixys
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IXFN 64N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 61 A Power MOSFET RDS(on) 85 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G... See More ⇒

Detailed specifications: IXFN44N50U2 , IXFN44N50U3 , IXFN44N60 , IXFN44N80 , IXFN48N50 , IXFN48N50U3 , IXFN50N50 , IXFN55N50 , IRFP460 , IXFN73N30 , IXFN80N50 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , IXFR180N07 .