All MOSFET. IXFN60N60 Datasheet

 

IXFN60N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFN60N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 700 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 380 nC

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: SOT227B

IXFN60N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN60N60 Datasheet (PDF)

1.1. ixfn60n60.pdf Size:71K _ixys

IXFN60N60
IXFN60N60

IXFN 60N60 HiPerFETTM VDSS = 600 V ID25 = 60 A Power MOSFETs RDS(on) = 75 mW Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 600 V S VDGR TJ = 25C to 150C; RGS = 1 MW 600 V G VGS Continuous 20 V VGSM Transient 30 V S

3.1. ixfn60n80p.pdf Size:145K _ixys

IXFN60N60
IXFN60N60

IXFN 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 53 A Power MOSFET ? ? RDS(on) ? 140 m? ? ? ? ? ? ? ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 800 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V VGSS Continuous 30 V VGSM Tra

 5.1. ixfn64n60p.pdf Size:148K _ixys

IXFN60N60
IXFN60N60

VDSS = 600 V IXFN 64N60P PolarHVTM HiPerFET ID25 = 50 A Power MOSFET ? ? RDS(on) ? 96 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V S VGSS Continuous 30 V D VGSM Trans

5.2. ixfn64n50p.pdf Size:144K _ixys

IXFN60N60
IXFN60N60

IXFN 64N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 61 A Power MOSFET ? ? RDS(on) ? 85 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V G VGSS Continuous 30 V VGSM Transient

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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