IXFN60N60 - аналоги, параметры транзистора - Справочник транзисторов

IXFN60N60 даташит

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7.1. Size:145K ixys
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IXFN 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 53 A Power MOSFET RDS(on) 140 m trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 800 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M

9.1. Size:148K ixys
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VDSS = 600 V IXFN 64N60P PolarHVTM HiPerFET ID25 = 50 A Power MOSFET RDS(on) 96 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S

9.2. Size:144K ixys
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IXFN 64N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 61 A Power MOSFET RDS(on) 85 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G

Другие MOSFET... IXFN44N50U2 , IXFN44N50U3 , IXFN44N60 , IXFN44N80 , IXFN48N50 , IXFN48N50U3 , IXFN50N50 , IXFN55N50 , IRFP460 , IXFN73N30 , IXFN80N50 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , IXFR180N07 .