IXFN73N30 Datasheet. Specs and Replacement

Type Designator: IXFN73N30  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT227B

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IXFN73N30 datasheet

 ..1. Size:131K  ixys
 ixfk73n30 ixfn73n30.pdf pdf_icon

IXFN73N30

VDSS ID25 RDS(on) HiPerFETTM IXFK 73 N 30 300 V 73 A 45 m Power MOSFETs IXFN 73 N 30 300 V 73 A 45 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr TO-264 AA (IXFK) TO-264 AA (IXFK) TO-264 AA (IXFK) TO-264 AA (IXFK) TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN ... See More ⇒

 9.1. Size:560K  ixys
 ixfn72n55q2.pdf pdf_icon

IXFN73N30

HiPerFETTM VDSS = 550 V IXFN 72N55Q2 Power MOSFET ID25 = 72 A RDS(on)= 72 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 550 V VDGR TJ = 25 C to 150... See More ⇒

 9.2. Size:566K  ixys
 ixfn70n60q2.pdf pdf_icon

IXFN73N30

HiPerFETTM VDSS = 600 V IXFN 70N60Q2 Power MOSFET ID25 = 70 A RDS(on)= 80 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150... See More ⇒

Detailed specifications: IXFN44N50U3, IXFN44N60, IXFN44N80, IXFN48N50, IXFN48N50U3, IXFN50N50, IXFN55N50, IXFN60N60, IRFB4110, IXFN80N50, IXFN90N30, IXFR10N100Q, IXFR120N20, IXFR12N100Q, IXFR15N80Q, IXFR180N07, IXFR180N085

Keywords - IXFN73N30 MOSFET specs

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