All MOSFET. IXFN73N30 Datasheet

 

IXFN73N30 Datasheet and Replacement


   Type Designator: IXFN73N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 360 nC
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT227B
 

 IXFN73N30 substitution

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IXFN73N30 Datasheet (PDF)

 ..1. Size:131K  ixys
 ixfk73n30 ixfn73n30.pdf pdf_icon

IXFN73N30

VDSS ID25 RDS(on)HiPerFETTMIXFK 73 N 30 300 V 73 A 45 mPower MOSFETsIXFN 73 N 30 300 V 73 A 45 mtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFN

 9.1. Size:560K  ixys
 ixfn72n55q2.pdf pdf_icon

IXFN73N30

HiPerFETTMVDSS = 550 VIXFN 72N55Q2Power MOSFETID25 = 72 ARDS(on)= 72 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrPreliminary Data SheetminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 550 VVDGR TJ = 25C to 150

 9.2. Size:566K  ixys
 ixfn70n60q2.pdf pdf_icon

IXFN73N30

HiPerFETTMVDSS = 600 VIXFN 70N60Q2Power MOSFETID25 = 70 ARDS(on)= 80 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrPreliminary Data SheetminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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