STF34N65M5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STF34N65M5
Marking Code: 34N65M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 62.5
nC
trⓘ - Rise Time: 8.7
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11
Ohm
Package:
TO-220FP
STF34N65M5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF34N65M5
Datasheet (PDF)
..1. Size:1315K st
stb34n65m5 stf34n65m5 stfi34n65m5 stp34n65m5 stw34n65m5.pdf
STB34N65M5, STF34N65M5, STFI34N65M5,STI34N65M5, STP34N65M5, STW34N65M5N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFET in a D2PAK, TO-220FP, I2PAKFP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes ID2TJmax max313STB34N65M52D2PAK1TO-220FPSTF34N65M5I2PAKFPSTFI34N65M5 TABTAB710 V
8.1. Size:510K st
stf34nm60n stp34nm60n stw34nm60n.pdf
STF34NM60NSTP34NM60N, STW34NM60NN-channel 600 V, 0.092 , 29 A MDmesh II Power MOSFETTO-220, TO-247, TO-220FPPreliminary dataFeaturesRDS(on) Type VDSS ID PTOTmax.3322STF34NM60N 600 V 0.105 29 A 40 W11STP34NM60N 600 V 0.105 29 A 210 WTO-247TO-220STW34NM60N 600 V 0.105 29 A 210 W 100% avalanche tested3 Low input capacitance and ga
8.2. Size:1236K st
stw34nm60nd stb34nm60nd stf34nm60nd stp34nm60nd.pdf
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60NDN-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeatures TABOrder codes VDS @TJ max. RDS(on) max. ID31STB34NM60ND321D2PAKSTF34NM60NDTO-220FP650 V 0.110 29 A STP34NM60NDTABSTW34NM60ND The worlds bes
8.3. Size:201K inchange semiconductor
stf34nm60nd.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STF34NM60NDFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Ga
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