STF34N65M5 - описание и поиск аналогов

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFET in a D2PAK, TO-220FP, I2PAKFP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDSS @ RDS(on) Order codes ID 2 TJmax max 3 1 3 STB34N65M5 2 D2PAK 1 TO-220FP STF34N65M5 I2PAKFP STFI34N65M5 TAB TAB 710 V

STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 , 29 A MDmesh II Power MOSFET TO-220, TO-247, TO-220FP Preliminary data Features RDS(on) Type VDSS ID PTOT max. 3 3 2 2 STF34NM60N 600 V 0.105 29 A 40 W 1 1 STP34NM60N 600 V 0.105 29 A 210 W TO-247 TO-220 STW34NM60N 600 V 0.105 29 A 210 W 100% avalanche tested 3 Low input capacitance and ga

STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB Order codes VDS @TJ max. RDS(on) max. ID 3 1 STB34NM60ND 3 2 1 D2PAK STF34NM60ND TO-220FP 650 V 0.110 29 A STP34NM60ND TAB STW34NM60ND The world s bes

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STF34NM60ND FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga